Search results for "Dangling bonds"
showing 5 items of 5 documents
Experimental evidence for two different precursors of E’γ centers in silica
2004
Electron paramagnetic resonance measurements of concentration and line shape of centers induced by γ ray irradiation are presented for natural and synthetic commercial silica with different OH contents. Synthetic materials with OH content >200 ppm by weight show one line shape for all investigated doses. In contrast, the other materials show a different line shape at low irradiation doses. Differences are also observed in the concentration growth of the centers in synthetic wet materials and in the other materials. The results are interpreted as evidence of two centers distinguishable by their line shape and having different precursors.
Luminescence of non-bridging oxygen hole centers as a marker of particle irradiation of {\alpha}-quartz
2021
The origin of the "red" emission bands in the 600 nm-700 nm region, observed in quartz crystals used for luminescence dating and environmental dosimetry, is still controversial. Their reported spectral and lifetime characteristics are often similar to those of oxygen dangling bonds ("non-bridging oxygen hole centers, NBOHCs") in glassy silicon dioxide. The presence of these "surface radical type" centers in quartz crystal requires sites with highly disordered local structure forming nano-voids characteristic to the structure of glassy SiO2. Such sites are introduced in the tracks of nuclear particles ({\alpha}-irradiation, neutrons, ions). In case of electrons they are created only at large…
29Si Hyperfine structure of the E’_alfa center in amorphous silicon dioxide
2006
We report a study by electron paramagnetic resonance on the E0 point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on -ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E0 consists of a pair of lines split by 49 mT. On the basis of the experimental results, a microscopic model is proposed for the E0 center, consisting of a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.
Characterization of E'delta and triplet point defects in oxygen-deficient amorphous silicon dioxide
2005
We report an experimental study by electron paramagnetic resonance (EPR) of gamma ray irradiation induced point defects in oxygen deficient amorphous SiO2 materials. We have found that three intrinsic (E'gamma, E'delta and triplet) and one extrinsic ([AlO4]0) paramagnetic centers are induced. All the paramagnetic defects but E'gamma center are found to reach a concentration limit value for doses above 10^3 kGy, suggesting a generation process from precursors. Isochronal thermal treatments of a sample irradiated at 10^3 kGy have shown that for T>500 K the concentrations of E'gamma and E'delta centers increase concomitantly to the decrease of [AlO4]0. This occurrence speaks for an hole tra…
Creation of glass-characteristic point defects in crystalline SiO2 by 2.5 MeV electrons and by fast neutrons
2019
The support from M -ERANET project “MyND” is acknowledged. K.K. was partially supported by the Collaborative Research Project of Laboratory for Materials and Structures, Tokyo Institute of Technology . Visiting researcher support from Ecole Polytechnique, Palaiseau is appreciated. Mr. Olivier Cavani is thanked for the expert help with irradiations.